| PART |
Description |
Maker |
| MX66U51235FMI10G MX66U51235FZ4I10G |
1.8V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| HX421S13IB-4 |
4GB 512M x 64-Bit DDR4-2133
|
List of Unclassifed Man...
|
| HX316C10F-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| KVR16LE11S8-4KF |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| HYB25DC512160C |
(HYB25DC512160C / HYB25DC512800C) 512M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
| KVR13LE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR16LSE11-4HB |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR16LSE11-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| HN29V51211T-50 HN29V51211 |
512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
